دیتاشیت AFGY160T65SPD-B4
مشخصات دیتاشیت
| نام دیتاشیت | AFGY160T65SPD-B4 |
|---|---|
| حجم فایل | 2641.369 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 11 |
دانلود دیتاشیت AFGY160T65SPD-B4 |
AFGY160T65SPD-B4 Datasheet |
|---|
مشخصات
- RoHS: true
- Type: Trench Field Stop
- Category: Triode/MOS Tube/Transistor/IGBTs
- Datasheet: onsemi AFGY160T65SPD-B4
- Operating Temperature: -55°C~+175°C@(Tj)
- Collector Current (Ic): 240A
- Power Dissipation (Pd): 882W
- Input Capacitance (Cies@Vce): -
- Turn?on Switching Loss (Eon): 12.4mJ
- Pulsed Collector Current (Icm): 480A
- Turn?off Switching Loss (Eoff): 5.7mJ
- Diode Reverse Recovery Time (Trr): 132ns
- Collector-Emitter Breakdown Voltage (Vces): 650V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
- Package: TO-247
- Manufacturer: onsemi
- Series: Automotive, AEC-Q100
- Packaging: Tube
- Part Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 240A
- Current - Collector Pulsed (Icm): 480A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
- Power - Max: 882W
- Switching Energy: 12.4mJ (on), 5.7mJ (off)
- Input Type: Standard
- Gate Charge: 245nC
- Td (on/off) @ 25°C: 53ns/98ns
- Test Condition: 400V, 160A, 5Ohm, 15V
- Reverse Recovery Time (trr): 132ns
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- detail: IGBT Trench Field Stop 650V 240A 882W Through Hole TO-247-3
